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FP10R12W1T4 IGBT MOD 1200V 20A 105W Infineon BSM300GA160DN1 Insulated Gate Bipolar Transistor

FP10R12W1T4 IGBT MOD 1200V 20A 105W Infineon BSM300GA160DN1 Insulated Gate Bipolar TransistorFP10R12W1T4 IGBT MOD 1200V 20A 105W

SKU: 9642094872 · From kehrbaum-architekten.de

4.4
USD22.00 USD47.00

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  • USA
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Ships within 48 hours · Estimated delivery Jul 29 - Aug 3

Description

BSM300GA160DN1 Insulated Gate Bipolar Transistor Module

30 kW/500 V

080 Kg Packaging Dimension 1

bundle consists of: Interface module (6ES7155-6BU00-0CN0)

Special length 15 m

FP10R12W1T4 IGBT MOD 1200V 20A 105W Infineon BSM300GA160DN1 Insulated Gate Bipolar TransistorFP10R12W1T4 IGBT MOD 1200V 20A 105W

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